High Purity Nitrogen Purification System for Semiconductor Applications
  • High Purity Nitrogen Purification System for Semiconductor Applications
  • High Purity Nitrogen Purification System for Semiconductor Applications
  • High Purity Nitrogen Purification System for Semiconductor Applications

High Purity Nitrogen Purification System for Semiconductor Applications

The carbon addition and deoxidation type nitrogen purification device further processes 99.9% of the nitrogen extracted from the nitrogen generation mechanism,causing 0.1% of the oxygen in the nitrogen to chemically react with a carbon deoxidizer to generate carbon dioxide,and further removes carbon dioxide and water vapor from the nitrogen, purifying the nitrogen to over 99.999% ,improving the quality of product gas,to adapt to industries with special requirements for gas purity and quality.

High Purity Nitrogen Purification System for Semiconductor Applications


Scope of application

Suitable for users of high-purity nitrogen,especially for magnetic materials,electronic industry and other processes that have strict requirements on oxygen and hy-drogen.

nitrogen purification system


Technical Parameters


Model

(Nm³/h)
Handling
capacity

DN(mm)
Inlet/Outlet
Diameter
(kg)
Weight of carbon
deoxidizer
Cooling

water

(t/h)

Applied power(kw)Equipment area
size(mm)
(HBTDC)Weight of 13 X molecular
   sieve(kg)
HBTHBTDCHBTHBTDCHBTHBTDC
HBT-130HBTDC-130≤30DN25130 0.2 12 2000*1350*23002500*1350*230075 
HBT-200HBTDC-200≤60DN40200 0.5 18 22.5 2200*1550*26002700*1550*2600100 
HBT-240HBTDC-240≤100DN40240 0.8 24 30 2350*1850*28502850*1850*2850160 
HBT-380HBTDC-380≤150DN50380 1.1 27 36 2650*1700*33503150*1700*3350230 
HBT-430HBTDC-430≤200DN50430 1.5 39 48 3050*1700*30003550*1700*3000230 
HBT-670HBTDC-670≤250DN50670 1.9 45 57 3250*1800*31003750*1800*3100260 
HBT-720HBTDC-720≤300DN65720 2.2 45 57 3250*2100*32003750*2100*3200260 
HBT-1200HBTDC-1200≤400DN651200 54 66 3400*2100*37003900*2100*3700260 
HBT-1440HBTDC-1440≤600DN651440 4.4 75 90 3800*2950*38004300*2950*3800380 
HBT-2400HBTDC-2400≤1000DN652400 7.4 90 105 5350*2950*40005850*2950*4000380 
Note:The above data is based on 0.8Mpa(G)feed air,ambient temperatuer20℃,0 m elevation and 80%relative humidity as design basis.
Note 2:Power is calculated based on flow rate.The power in the table is determined according to the flow rate at a purity of 39%.


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